The ruggedness of NoMIS SiC power semiconductors comes from their thicker gate oxide, longer short-circuit withstand time, and innovative internal design, ensuring durability under demanding conditions.
NOMIS POWER
SEMICONDUCTORS AND MODULES
MORE RUGGED; MORE RELIABLE; MORE CUSTOMIZABLE
NoMIS SiC MOSFETs and Power Modules: the future of wide-bandgap technology
NoMIS SiC MOSFETs and power modules deliver unmatched ruggedness, reliability, and customizability for the most demanding power semiconductor applications. Helping you achieve a decisive competitive advantage.
Rugged
Reliable
NoMIS SiC MOSFETs and power modules ensure long-term reliability at high switching frequencies through robust architecture, rigorous screening, and innovative design that balances energy losses and prevents thermal hotspots.
Customizable
With our rapid design cycles and flexible fabless model, we provide custom semiconductor device and packaging solutions, tailored layouts, interconnects, and comprehensive qualification services—empowering you to outshine the competition.
FEATURED SOLUTIONS
TECHNICAL PRODUCT SPECIFICATIONS
- Discretes
- Power Modules
| Product | Image | Buy Online | Data sheet | Generation/Family | Blocking Voltage | Rds_on @ RT | Current Rating | Max. Junction Temperature | Package Type |
|---|---|---|---|---|---|---|---|---|---|
| N3PT100MP170 |
|
|
3P | 1700 V | 100 mΩ | 24 A | 175 degC | Bare Die | |
| N3PT1000MP170D |
|
|
3P | 1700 V | 1000 mΩ | 5.1 A | 175 degC | TO-247-3L | |
| N3PT035MP330K |
|
|
3P | 3300 V | 35 mΩ | 88 A | 175 degC | TO-247-4L | |
| N3PT100MP170K |
|
|
3P | 1700 V | 100 mΩ | 24 A | 175 degC | TO-247-4L | |
| N3PT028MP120K |
|
|
3P | 1200 V | 28 mΩ | 72 A | 175 degC | TO-247-4L | |
| N3T080MP330 |
|
|
3 | 3300 V | 80 mΩ | 34 A | 175 degC | Bare Die | |
| N3T080MP330K |
|
|
3 | 3300 V | 80 mΩ | 34 A | 175 degC | TO-247-4L | |
| N3PT065MP120K |
|
|
3P | 1200 V | 65 mΩ | 40 A | 175 degC | TO-247-4L | |
| N3T200MP330S |
|
|
3 | 3300 V | 200 mΩ | 20 A | 175 degC | SOT-227 | |
| N3T035MP120K |
|
|
3 | 1200 V | 35 mΩ | 76 A | 175 degC | TO-247-4L |
| Product | Image | Buy Online | Data sheet | Generation/Family | Blocking Voltage | Rds_on @ RT | Current Rating | Max. Junction Temperature | Configuration | Module Type |
|---|---|---|---|---|---|---|---|---|---|---|
| NH3T008MP120F2 |
|
|
3 | 1200 V | 8 mΩ | 200 A | 175 degC | Half-Bridge | Pin Pack 2 | |
| NCD3T400MP330S |
|
|
3 | 3300 V | 400 mΩ | 20 A | 175 degC | Common-Drain | SOT-227 |
Questions?
Contact UsAuthorized Distributors
Richardson Electronics is NoMIS Power's authorized global distribution partner, bringing our advanced Silicon Carbide (SiC) power semiconductor portfolio — spanning 1.2 kV to 10 kV — to customers worldwide.
With nearly 80 years as a global manufacturer and distributor of engineered power and RF/microwave solutions, Richardson Electronics' Power & Microwave Technologies group offers customers end-to-end engineering capabilities, including design-in support, systems integration, prototyping, testing, logistics, and aftermarket service. This comprehensive approach helps accelerate the transition from legacy silicon IGBT architectures to high-efficiency SiC across battery energy storage, renewable energy, AI data center power, HVDC interfaces, solid-state transformers, industrial drives, and electrified transportation.
Reach out to Richardson Electronics for samples, pricing, and full application engineering support.
With nearly 80 years as a global manufacturer and distributor of engineered power and RF/microwave solutions, Richardson Electronics' Power & Microwave Technologies group offers customers end-to-end engineering capabilities, including design-in support, systems integration, prototyping, testing, logistics, and aftermarket service. This comprehensive approach helps accelerate the transition from legacy silicon IGBT architectures to high-efficiency SiC across battery energy storage, renewable energy, AI data center power, HVDC interfaces, solid-state transformers, industrial drives, and electrified transportation.
Reach out to Richardson Electronics for samples, pricing, and full application engineering support.
Astute Group is an authorized distributor for NoMIS Power in Europe, MENA, & Australia/New Zealand, expanding access to our advanced Silicon Carbide (SiC) power semiconductor portfolio.
Astute Group combines extensive global distribution infrastructure, specialist engineering support, and deep market expertise to deliver NoMIS Power products to customers across aerospace, defence, energy, transportation, and industrial markets.
Together, we enable faster design cycles, assured supply, and technical excellence from concept to production. Contact Astute Group for samples, pricing, and technical support
Astute Group combines extensive global distribution infrastructure, specialist engineering support, and deep market expertise to deliver NoMIS Power products to customers across aerospace, defence, energy, transportation, and industrial markets.
Together, we enable faster design cycles, assured supply, and technical excellence from concept to production. Contact Astute Group for samples, pricing, and technical support