Part Number: N3PT100MP170
1700V 100mΩ Silicon Carbide MOSFET
V1700 V Rds(on)100 mΩ I24 A Tj max175 degC PackageBare Die
Features
- State-of-the-art SiC MOSFET technology
- Reliable gate oxide process
- Ultra-low input capacitance
- Best-in-class figure-of-merits, [Ron*Ciss] and [Ron*Crss]
- Stable switching characteristics up to 175 °C
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
- Enhanced system reliability
- Reduced total harmonic distortion
Parametric Data
| Parameter | Value |
|---|---|
| Generation / Family | 3P |
| Blocking Voltage | 1700 V |
| Rds(on) @ RT | 100 mΩ |
| Current Rating | 24 A |
| Max Junction Temperature | 175 degC |
| Package Type | Bare Die |
Applications
Applications include:
- Rail / Traction (~1.5 kV systems & aux converters)
- Renewable / Wind / Solar HV Conversion & HV DC/DC
- Industrial High-Voltage Drives
- Commercial EV / Heavy-Duty & Higher-Voltage Chargers
- Defense / Aerospace / Maritime HV Power
Where to Buy
Direct
Get direct pricing from NoMIS Power for higher-volume orders and custom package types.
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