About Us
Company Mission
Power electronics are at the heart of the global energy transition, and are comprised of critical power semiconductor and packaging components that enable their operation. However, the 'electrification of everything' requires a step-change in the performance, efficiency, and ruggedness of today's power semiconductor technology. Conventional Silicon-based technology simply isn't up to the scale of the challenge ahead. Drawing on decades of experience at the cutting-edge of new materials science, device design, and packaging architecture, NoMIS Power was formed to bring the breakthrough advantages of Silicon Carbide (SiC) out of the laboratory and into the global power electronics industry. Combining unique expertise from the worlds of scientific research and power semiconductor manufacturing, NoMIS Power develops SiC solutions for leading power electronics groups in applications ranging from electric vehicles to Solar PV and beyond. With our unparalleled experience in the SiC supply chain and a global network of partners, NoMIS Power is the trusted choice for groups seeking to evaluate SiC technology, accelerate market entry, and develop next-generation technology.
Adam J Morgan
Co-founder, CEO, & Technical Lead for Packaging Design
Dr. Adam J Morgan is co-founder and CEO of NoMIS Power, spearheading the company’s efforts in SiC technology with U.S. government agencies, business partners, and key clients.
An expert in packaging design, Dr. Morgan has experience in Level-1 power discrete and power module packaging, as well as level-2 and Level-3 power packaging for hard- and soft-switching SiC-based power converters rated for 600 V to 20 kV.
Prior to founding NoMIS, Dr. Morgan was a postdoctoral research scientist at SUNY Polytechnic Institute in Albany, N.Y., working on WBG power semiconductor device research regarding high-temperature and high-voltage power packaging and power electronics testing as part of the Center for Advanced Semiconductor Power Electronics Research (CASPER).
Dr. Morgan has previously worked in the corporate research center for ABB US, the Sandia National Laboratories, and the National Institute of Standards and Technology.
Read More
Co-founder, CEO, & Technical Lead for Packaging Design
Dr. Adam J Morgan is co-founder and CEO of NoMIS Power, spearheading the company’s efforts in SiC technology with U.S. government agencies, business partners, and key clients.
An expert in packaging design, Dr. Morgan has experience in Level-1 power discrete and power module packaging, as well as level-2 and Level-3 power packaging for hard- and soft-switching SiC-based power converters rated for 600 V to 20 kV.
Prior to founding NoMIS, Dr. Morgan was a postdoctoral research scientist at SUNY Polytechnic Institute in Albany, N.Y., working on WBG power semiconductor device research regarding high-temperature and high-voltage power packaging and power electronics testing as part of the Center for Advanced Semiconductor Power Electronics Research (CASPER).
Dr. Morgan has previously worked in the corporate research center for ABB US, the Sandia National Laboratories, and the National Institute of Standards and Technology.
Woongje Sung
Co-Founder & Chief Technology Officer
Dr. Woongje Sung is co-founder and Chief Technology Officer at NoMIS Power and Associate Professor at SUNY Polytechnic Institute, Albany, N.Y.
He has experience in a number of industrial settings, including a startup company, a semiconductor foundry (Dongbu HiTek), and a mature multi-national company (Samsung Advanced Institute of Technology).
Dr. Sung is a founding member of DOE-funded PowerAmerica Institute, where he has been contributing to establishing the baseline process of SiC MOSFETs and diodes at X-Fab. He has fabricated SiC JBS diodes, JFETs, GTOs, and MOSFETs.
Dr. Sung has been working on design, fabrication, and characterization of 6.5 kV, 10 kV, and 15 kV SiC MOSFETs in support of PowerAmerica/DoE, as well as Army Research Lab & Office of Naval Research/DoD.
Read More
Co-Founder & Chief Technology Officer
Dr. Woongje Sung is co-founder and Chief Technology Officer at NoMIS Power and Associate Professor at SUNY Polytechnic Institute, Albany, N.Y.
He has experience in a number of industrial settings, including a startup company, a semiconductor foundry (Dongbu HiTek), and a mature multi-national company (Samsung Advanced Institute of Technology).
Dr. Sung is a founding member of DOE-funded PowerAmerica Institute, where he has been contributing to establishing the baseline process of SiC MOSFETs and diodes at X-Fab. He has fabricated SiC JBS diodes, JFETs, GTOs, and MOSFETs.
Dr. Sung has been working on design, fabrication, and characterization of 6.5 kV, 10 kV, and 15 kV SiC MOSFETs in support of PowerAmerica/DoE, as well as Army Research Lab & Office of Naval Research/DoD.
Gehan Wanduragala
Co-founder, Chief Strategy & Commercial Officer
Gehan Wanduragala is a co-founder and Chief Strategy & Commercial Officer at NoMIS Power.
Prior to joining NoMIS, Gehan had over 13 years of experience in industry and consulting advising multiple high-growth startups and established companies in the clean tech and power electronics industry in India, Europe, and the USA.
At NoMIS Gehan is responsible for the Group’s overall business strategy and performance review process. He plays a key role in identifying and evaluating new strategic opportunities, structuring relationships with business partners, and designing and implementing new business processes to help the organization scale.
Gehan has advised a number of leading groups in the global power electronics space, helping them identify opportunities for market expansion and vertical integration in the context of the clean energy revolution.
Read More
Co-founder, Chief Strategy & Commercial Officer
Gehan Wanduragala is a co-founder and Chief Strategy & Commercial Officer at NoMIS Power.
Prior to joining NoMIS, Gehan had over 13 years of experience in industry and consulting advising multiple high-growth startups and established companies in the clean tech and power electronics industry in India, Europe, and the USA.
At NoMIS Gehan is responsible for the Group’s overall business strategy and performance review process. He plays a key role in identifying and evaluating new strategic opportunities, structuring relationships with business partners, and designing and implementing new business processes to help the organization scale.
Gehan has advised a number of leading groups in the global power electronics space, helping them identify opportunities for market expansion and vertical integration in the context of the clean energy revolution.
Anant Agarwal
Co-Founder & Chief Marketing Officer
Dr. Anant Agarwal is co-founder and Chief Marketing Officer at NoMIS Power and Professor at The Ohio State University, Columbus, Ohio.
Between 2013 and 2016 Dr. Agarwal worked at the U.S. Department of Energy, where he created and managed four programs related to wide bandgap (WBG) technology, including founding the PowerAmerica Institute.
From 1999 to 2013 Dr. Agarwal was Director of Research and Development for WBG devices at Cree, Inc. In this role he oversaw the development and commercialization of Silicon Carbide diode and MOSFET power devices that today are employed globally to improve efficiency and reduce power consumption in systems such as power supplies, solar inverters, and motor drives.
Previously, Dr. Agarwal was a Fellow at Northrop Grumman Science and Technology Center, Pittsburgh (1990-1999). While at Northrop Grumman he led research activities on radio frequency Silicon and Silicon-Germanium transistors. He was also instrumental in solving a large number of fundamental issues relating to WBG technologies.
Prior to joining Northrop Grumman, Dr. Agarwal held various teaching and research positions (1984-1990) including Associate Professor in Allahabad, India, and Member of the Technical Staff at AT&T Bell Laboratories, Murray Hill, N.J. While at Bell Labs he was involved in the development of Gallium-Arsenide digital circuits for fiber-optic communications.
Read More
Co-Founder & Chief Marketing Officer
Dr. Anant Agarwal is co-founder and Chief Marketing Officer at NoMIS Power and Professor at The Ohio State University, Columbus, Ohio.
Between 2013 and 2016 Dr. Agarwal worked at the U.S. Department of Energy, where he created and managed four programs related to wide bandgap (WBG) technology, including founding the PowerAmerica Institute.
From 1999 to 2013 Dr. Agarwal was Director of Research and Development for WBG devices at Cree, Inc. In this role he oversaw the development and commercialization of Silicon Carbide diode and MOSFET power devices that today are employed globally to improve efficiency and reduce power consumption in systems such as power supplies, solar inverters, and motor drives.
Previously, Dr. Agarwal was a Fellow at Northrop Grumman Science and Technology Center, Pittsburgh (1990-1999). While at Northrop Grumman he led research activities on radio frequency Silicon and Silicon-Germanium transistors. He was also instrumental in solving a large number of fundamental issues relating to WBG technologies.
Prior to joining Northrop Grumman, Dr. Agarwal held various teaching and research positions (1984-1990) including Associate Professor in Allahabad, India, and Member of the Technical Staff at AT&T Bell Laboratories, Murray Hill, N.J. While at Bell Labs he was involved in the development of Gallium-Arsenide digital circuits for fiber-optic communications.
Seung Yup Jang
Vice President, Head of SiC Device Development
Seung Yup leads SiC Device Development at NoMIS Power, taking our leading edge device technology from R&D to qualification and production.
He brings over a decade of industry experience in power device development with LG Electronics in South Korea in his prior role as Chief Research Engineer where he worked on SiC, GaN, and Si CMOS Integrated Circuit Design.
Seung Yup holds a Ph.D. in Applied Physics from Seoul National University, South Korea and is a Senior Research Scientist at SUNY Polytechnic Institute.
Read More
Vice President, Head of SiC Device Development
Seung Yup leads SiC Device Development at NoMIS Power, taking our leading edge device technology from R&D to qualification and production.
He brings over a decade of industry experience in power device development with LG Electronics in South Korea in his prior role as Chief Research Engineer where he worked on SiC, GaN, and Si CMOS Integrated Circuit Design.
Seung Yup holds a Ph.D. in Applied Physics from Seoul National University, South Korea and is a Senior Research Scientist at SUNY Polytechnic Institute.
Shadi Shahedipour-Sandvik
Co-Founder
Professor of Nanoscale Engineering, Director of the WBG Optronix Lab, and Deputy-Director of SUNY Poly CASPER, Dr. Shahedipour-Sandvik’s research is focused on development of wide bandgap III-Nitride electronic, optoelectronic, and sensing materials and devices for a variety of application including energy, high frequency/power electronics, emitters, photon detection, and chemical and biosensors. Dr. Shahedipour-Sandvik’s focus and technical approach is on creating a closed loop between growth and understanding materials properties and new/optimized device development grounded in theoretical modeling.
Read More
Co-Founder
Professor of Nanoscale Engineering, Director of the WBG Optronix Lab, and Deputy-Director of SUNY Poly CASPER, Dr. Shahedipour-Sandvik’s research is focused on development of wide bandgap III-Nitride electronic, optoelectronic, and sensing materials and devices for a variety of application including energy, high frequency/power electronics, emitters, photon detection, and chemical and biosensors. Dr. Shahedipour-Sandvik’s focus and technical approach is on creating a closed loop between growth and understanding materials properties and new/optimized device development grounded in theoretical modeling.
Mark Sperry
Venture Advisor
An accomplished senior leader with broad-ranging global experience and a passion for sustainability. Extensive background in both startup and Fortune 50 environments with expertise in strategic planning, marketing, sales, partnerships, finance, product development, and operations. Adept at developing people and building high-performing teams. Known for creating sound business and marketing strategies coupled with realistic tactical execution plans. Proven ability to secure funding from both public- and private-sector entities.
Read More
Venture Advisor
An accomplished senior leader with broad-ranging global experience and a passion for sustainability. Extensive background in both startup and Fortune 50 environments with expertise in strategic planning, marketing, sales, partnerships, finance, product development, and operations. Adept at developing people and building high-performing teams. Known for creating sound business and marketing strategies coupled with realistic tactical execution plans. Proven ability to secure funding from both public- and private-sector entities.
Timeline
SiC Power Module Prototyping
6.5 kV SiC MOSFETs, JBS diodes and JBSFETs for 100 A half-bridge power module: Fab at SiCamore (NSF & ARPA-E)
Robust SiC MOSFETs for EVs
1.2 kV SiC MOSFETs - Rugged design: Fab at SiCamore (DoE VTO EDTC)
10 kV SiC Discretes & Co-Packs
High voltage device (6.5kV ~13kV) in custom package
Harsh Environment Testing of SiC Power ICs
SMART SiC Power ICs 600 V LMOS + CMOS: Fab at ADI (ARPA-E)
Best-in-Class Medium Voltage SiC Devices
6.5 kV, 10 kV SiC MOSFETs: Fab at X-FAB (PowerAmerica)
Breakthrough to Address Implant Straggle in Medium Voltage SiC Devices
13 kV SiC MOSFETs and JBSFETs: Fab at ADI (ARL/ ONR)
10 A SiC Lateral MOSFETs with RESURF Structure
600 V Lateral, Vertical MOSFETs: Fab at X-FAB (PowerAmerica)
First SiC Devices Designed & Manufactured at NY-PEMC
1.7 kV SiC JBS diode: Fab at NY-PEMC
