Part Number: N3PT1000MP170D
1700V 1000mΩ Silicon Carbide MOSFET
V1700 V Rds(on)1000 mΩ I5.1 A Tj max175 degC PackageTO-247-3L
Features
- State-of-the-art SiC MOSFET technology
- Reliable gate oxide process
- Stable switching characteristics up to 175 °C
- Ultra-efficient edge termination
- Rugged dv/dt capability
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
- Enhanced system reliability
- Reduced total harmonic distortion
Parametric Data
| Parameter | Value |
|---|---|
| Generation / Family | 3P |
| Blocking Voltage | 1700 V |
| Rds(on) @ RT | 1000 mΩ |
| Current Rating | 5.1 A |
| Max Junction Temperature | 175 degC |
| Package Type | TO-247-3L |
Applications
Applications include:
- EV Auxiliary Functions (IMD, SSR, pre-charge, aux DC/DC, HV sensing)
- Rail & Utility Aux Supplies (pre-charge, bleed, HV sensing)
- Renewable / ESS String-Level Conversion & Monitoring
- Industrial MV Control, Protection & Measurement PSUs
- Defense / Aerospace HV Auxiliaries (radar, avionics)
Where to Buy
Direct
Get direct pricing from NoMIS Power for higher-volume orders and custom package types.
Request a QuoteAuthorized Distributor
Speak to your trusted distributor
or local territory support.
