Part Number: NH3T008MP120F2
1200V 8mΩ Half-Bridge Power Module
V1200 V Rds(on)8 mΩ I200 A Tj max175 degC
Features
- State-of-the-art SiC MOSFET technology
- Reliable gate oxide process
- 100% avalanche tested
- Press-fit package for design flexibility
- Baseplate-less for low thermal resistance
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
- Enhanced system reliability
- Reduced total harmonic distortion
Parametric Data
| Parameter | Value |
|---|---|
| Generation / Family | 3 |
| Blocking Voltage | 1200 V |
| Rds(on) @ RT | 8 mΩ |
| Current Rating | 200 A |
| Max Junction Temperature | 175 degC |
| Module Type | Pin Pack 2 |
| Configuration | Half-Bridge |
Applications
Applications include:
- EV Traction & High-Power DC Fast Chargers
- Renewable / Solar / ESS High-Power Conversion
- Rail Traction (Aux & Mid-Voltage Blocks)
- Industrial Heavy-Duty Drives
- Maritime / Defense Power Conversion
Where to Buy
Direct
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