Part Number: N3PT035MP330K
3300V 35mΩ Silicon Carbide MOSFET
V3300 V Rds(on)35 mΩ I88 A Tj max175 degC PackageTO-247-4L
Features
- State-of-the-art SiC MOSFET technology
- Reliable gate oxide process
- Ultra-low output capacitance
- Best-in-class figure-of-merits, [Ron*Coss] and [Ron*Crss]
- Stable switching characteristics up to 175 °C
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
- Enhanced system reliability
- Reduced total harmonic distortion
Parametric Data
| Parameter | Value |
|---|---|
| Generation / Family | 3P |
| Blocking Voltage | 3300 V |
| Rds(on) @ RT | 35 mΩ |
| Current Rating | 88 A |
| Max Junction Temperature | 175 degC |
| Package Type | TO-247-4L |
Applications
Applications include:
- Data center/AI Infrastructure (UPS, SST, rectifier, and protection-stages)
- Defense/Maritime medium voltage converters & Directed Energy/Pulse Power
- Industrial medium voltage drives & VFDs
- Medium voltage medical imaging & therapy
- Utility-scale renewable/ESS/HVDC interfaces, modular multi-level converters, SSTs, DC-as-a-Service
Where to Buy
Direct
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