Part Number: N3T080MP330
3300V 80mΩ Silicon Carbide MOSFET
V3300 V Rds(on)80 mΩ I34 A Tj max175 degC PackageBare Die
Features
- State-of-the-art SiC MOSFET technology
- Reliable gate oxide process
- Ultra-low output capacitance
- Best-in-class figure-of-merits, [Ron*Coss] and [Ron*Crss]
- Stable switching characteristics up to 175 °C
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
- Enhanced system reliability
- Reduced total harmonic distortion
Parametric Data
| Parameter | Value |
|---|---|
| Generation / Family | 3 |
| Blocking Voltage | 3300 V |
| Rds(on) @ RT | 80 mΩ |
| Current Rating | 34 A |
| Max Junction Temperature | 175 degC |
| Package Type | Bare Die |
Applications
Applications include:
- MV Drives (Main Inverter)
- Solar/Wind Inverters (Main)
- SST/HVDC (Main)
- AI Data Centers (MV-LV SST, MW PSU rectifiers)
- MV Medical (Imaging PSU)
- Pulsed Power (Radar, Plasma, Medical)
- Down-hole Drilling (Main Power)
Where to Buy
Direct
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