NOMIS POWER
SEMICONDUCTORS AND MODULES

The ruggedness of NoMIS SiC power semiconductors comes from their thicker gate oxide, longer short-circuit withstand time, and innovative internal design, ensuring durability under demanding conditions.

NoMIS SiC MOSFETs and power modules ensure long-term reliability at high switching frequencies through robust architecture, rigorous screening, and innovative design that balances energy losses and prevents thermal hotspots.

With our rapid design cycles and flexible fabless model, we provide custom semiconductor device and packaging solutions, tailored layouts, interconnects, and comprehensive qualification services—empowering you to outshine the competition.