Technology & Services

Our integrated expertise from device design to packaging and testing, along with proven track record, and global foundry network, helps leading companies develop best-in-class SiC solutions in a fraction of the time.

Our bespoke end-to-end services include:

• Design development for SiC devices (diodes, MOSFETs, JFETs) and modules from 600 V to 13 kV with proven and leading-edge technologies.
• Testing and qualification support for new designs.
• Interpretation of analysis and re-engineering to optimize performance.
• Creation and improvement of Process Development Kits (PDKs).
• Support in establishing the process at a foundry or fab.

With a combined 70+ years experience at the leading edge of SiC technology, NoMIS brings you a unique and expanding portfolio of designs and processes covering:

• Industry-leading Gen 3 PLANAR MOSFETs and Schottky Diodes.
• Integrated MOSFETs.
• Novel next-generation MOSFET designs with enhanced reliability, ruggedness, and lower on resistance.
• Medium- and high-voltage SiC modules.

NoMIS’ team of global SiC experts can help your group navigate a winning path in this critical but complex technology. From helping you understand the current state of the art of SiC and the technology’s future direction to evaluating key investment decisions, we can help you every step of the way.

• Understand the current SiC market landscape and supply chain.
• Evaluate the pros and cons of competing technologies.
• Assess the costs and investment associated with SiC.
• Develop your own SiC technology road map.
• Identify sources of talent.
• Get connected to key supply chain partners.
• Technical due diligence of vendors, partners, and targets.
• Train and develop your SiC professionals.