NoMIS Power will unveil its first range of advanced 1200 V SiC MOSFETs at ICSCRM 2024, in Raleigh, N.C, Sept. 29 – Oct. 4th. Featuring a more reliable gate oxide process, 100% avalanche testing and multiple packaging options, NoMIS’ SiC MOSFETs deliver greater ruggedness and reliability for power electronics applications, including EVs, motor drives, solar PV inverters, energy storage systems, and solid-state power controllers.