NSF SBIR Phase I

November 10, 2021

November 10, 2021, Albany, NY – NoMIS Power was notified by the National Science Foundation (NSF) that it was awarded over a quarter of a million dollars for a Phase I SBIR for “Novel Structure for Efficient and Reliable MV SiC Power Devices.” Working alongside researchers from SUNY Polytechnic Institute, this SBIR project will work toward developing a novel approach to improve the trade-off relationship between reliability (i.e., short circuit withstand time) and on-state efficiency (i.e., on-resistance) for 6.5 kV SiC MOSFETs, which will vastly improve upon commercial off-the-shelf SiC MOSFETs. The implementation of this technology has positive implications for renewable energy, industry, and transportation sectors looking to adopt clean technology. Particular interest comes from the DC fast-charging market, which will need to utilize power semiconductor device technology, such as this, in order to deliver short battery charging times in line with today’s fueling times for internal combustion engine vehicles.