Part Number: N3PT065MP120K
1200V 65mΩ Silicon Carbide MOSFET
V1200 V Rds(on)65 mΩ I40 A Tj max175 degC PackageTO-247-4L
Features
- State-of-the-art SiC MOSFET technology
- Reliable gate oxide process
- 100% avalanche tested
- Low input capacitance
- Best-in-class figure-of-merits, [Ron*Ciss] and [Ron*Crss]
- Stable switching characteristics up to 175 °C
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
- Enhanced system reliability
- Reduced total harmonic distortion
Parametric Data
| Parameter | Value |
|---|---|
| Generation / Family | 3P |
| Blocking Voltage | 1200 V |
| Rds(on) @ RT | 65 mΩ |
| Current Rating | 40 A |
| Max Junction Temperature | 175 degC |
| Package Type | TO-247-4L |
Applications
Applications include:
- EV Traction Inverters & e-Axles
- On-Board Chargers (passenger / commercial)
- DC Fast Chargers (PFC / boost & isolated DC/DC)
- Renewable / ESS Inverters & Rectifiers
- Industrial High-Speed Motor Drives & Servo Packs
- Data Center UPS / PSU PFC, SSRs / Contactors
Where to Buy
Direct
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