Part Number: N3T200MP330S
3300V 200mΩ Silicon Carbide MOSFET
V3300 V Rds(on)200 mΩ I20 A Tj max175 degC PackageSOT-227
Features
- State-of-the-art SiC MOSFET technology
- Reliable gate oxide process
- 100% avalanche tested
- Electrically isolated baseplate
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
- Enhanced system reliability
- Reduced total harmonic distortion
Parametric Data
| Parameter | Value |
|---|---|
| Generation / Family | 3 |
| Blocking Voltage | 3300 V |
| Rds(on) @ RT | 200 mΩ |
| Current Rating | 20 A |
| Max Junction Temperature | 175 degC |
| Package Type | SOT-227 |
Applications
Applications include:
- Energy storage systems
- EV fast charging stations
- EV onboard chargers
- Motor drives
- Server power supplies
- Solar PV inverters
- Solid-state power controllers
- Uninterruptible power supplies
Where to Buy
Direct
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