Part Number: N3T035MP120K
1200V 35mΩ Silicon Carbide MOSFET
V1200 V Rds(on)35 mΩ I76 A Tj max175 degC PackageTO-247-4L
Features
- State-of-the-art SiC MOSFET technology
- Reliable gate oxide process
- 100% avalanche tested
- Low input capacitance
- Low internal gate resistance
- Low body diode forward voltage drop
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
- Enhanced system reliability
- Reduced total harmonic distortion
Parametric Data
| Parameter | Value |
|---|---|
| Generation / Family | 3 |
| Blocking Voltage | 1200 V |
| Rds(on) @ RT | 35 mΩ |
| Current Rating | 76 A |
| Max Junction Temperature | 175 degC |
| Package Type | TO-247-4L |
Applications
Applications include:
- Energy storage systems
- EV fast charging stations
- EV onboard chargers
- Motor drives
- Server power supplies
- Solar PV inverters
- Solid-state power controllers
- Uninterruptible power supplies
Where to Buy
Direct
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