NoMIS Power awarded SBIR by DMEA for high temperature technology on SiC

July 19, 2021

July 29, 2021, Albany, NY – The team of NoMIS Power, State University of New York Polytechnic Institute, and North Carolina State University was notified by the Defense Microelectronics Activity (DMEA) that it was awarded a Phase I SBIR for “Manufacturing Platform for High-Temperature CMOS ICs on SiC.” The project objectives are to develop high-temperature (> 300 °C) operational dielectrics, low- and high-voltage devices, and packaging for SiC CMOS integrated circuits technologies in a production-grade fabrication facility in the U.S. The end goal is to establish a manufacturing platform for high-temperature BCD (Bipolar-CMOS-DMOS) technology on SiC that will be able to provide new semiconductor technology for system integrators and builders incorporating power, sensing, and control electronics into applications that operate in harsh environments.