What is NoMIS Power's 6.5 kV SiC MOSFET?

It is a large-die silicon carbide (SiC) power MOSFET that NoMIS Power has demonstrated at over 8 kV blocking voltage, 90 mΩ on-resistance, and 55 A drain current, extending the company's planar SiC platform from the 3.3 kV class into the 6.5 kV high-voltage class.

When will NoMIS Power's 6.5 kV SiC devices be available?

The 6.5 kV large-die SiC MOSFET is sampling now to U.S.-based customers for evaluation. Standard production 6.5 kV parts are scheduled for Q4 2026.

What is NoMIS Power's high-voltage SiC roadmap?

NoMIS Power's SiC portfolio spans 1200 V to 20 kV. The 3.3 kV family is in production; the 6.5 kV MOSFET is demonstrated and sampling; and 10 kV MOSFETs, diodes, hybrid (JBSFET) devices, and 20 kV SiC IGBTs are in development for grid-scale HVDC, traction, pulsed power, aerospace, and defense.

How does SiC compare with silicon IGBTs at high voltage?

Compared with legacy silicon IGBTs, NoMIS Power's SiC MOSFETs offer lower switching losses, higher power density, and more robust operation at high temperature, altitude, and radiation, and they require no separate anti-parallel diode - simplifying designs while improving efficiency and survivability.

Is NoMIS Power a domestic (U.S.) source of high-voltage SiC?

Yes. NoMIS Power gives U.S. data-center, aerospace, and defense customers a domestic source of high-voltage SiC. Its devices are U.S.-designed, ITAR- and DFARS-aware, available through various foundry options, and already specified in U.S. government-funded programs.

What applications use NoMIS Power's high-voltage SiC?

High-voltage direct current (HVDC) transmission, solid-state transformers, fusion and pulsed power, rail traction, megawatt-scale EV charging, AI data-center power, radar, and aerospace and defense power systems.

NoMIS Power Demonstrates 6.5 kV SiC MOSFET, Advancing a High-Voltage Roadmap to 10 kV and 20 kV SiC IGBTs

August 22, 2026

From demonstrated 6.5 kV silicon carbide to a high-voltage IGBT roadmap

NoMIS Power’s 6.5 kV demonstration is the foundation for its higher-voltage objectives. While the company’s MOSFET portfolio scales from 3.3 kV (in production) through the demonstrated 6.5 kV device, the highest voltage classes – 10 kV and above – increasingly favor SiC insulated-gate bipolar transistor (IGBT) architectures for their conduction characteristics at very high blocking voltages. NoMIS Power is extending its rugged planar SiC device and packaging expertise into 6.5 kV, 10 kV, and 20 kV SiC IGBTs suited to the size, weight, power (SWaP), and reliability demands of aerospace, defense, data-center, and grid-scale platforms.

Why high-voltage SiC matters for critical, dual-use applications

Across the target voltage range, SiC delivers advantages that are decisive for demanding, dual-use power systems:

Survivability and ruggedness: robust operation in high-temperature, high-altitude, and high-radiation environments compared with legacy silicon devices of similar rating.
Size, weight, and power (SWaP): higher power density enables smaller, lighter power conversion for platforms where space and mass are constrained.
Efficiency and thermal headroom: low, stable losses reduce cooling burden and improve mission endurance.
Trusted, domestic design: U.S.-designed SiC devices and packaging support supply-chain assurance for the aerospace and defense industrial base.

The SiC advantage over silicon IGBTs

At high voltage, NoMIS Power’s planar SiC MOSFETs offer decisive advantages over legacy silicon IGBTs:

Efficiency across temperature: low, stable conduction and switching losses, versus silicon IGBTs whose switching losses can roughly double from 25 °C to 175 °C.
Design simplicity: no separate anti-parallel diode required, easing the transition from IGBT-based platforms.
Ruggedness and reliability: a thicker-than-industry-standard gate oxide and rugged large-die design deliver robust operation in high-temperature, high-altitude, and high-radiation environments.
Higher power density: smaller, lighter, more efficient converters at the system level.

A U.S.-based, domestic source of high-voltage SiC

For programs dependent on a single supplier of high-voltage SiC, NoMIS Power offers a domestic alternative. The company’s devices are U.S.-designed, ITAR- and DFARS-aware, and available through various foundry options, and its SiC is already specified in programs funded by the U.S. Department of Energy and Department of War. The company supports device qualification and design-in – including form-fit-function-compatible devices and support for existing high-voltage SiC platforms – to reduce single-source risk and strengthen continuity of supply for mission-critical programs. NoMIS Power designs SiC devices, packaging, and power modules at its facility within the Albany Nanotech Complex in Albany, New York.

Availability and engagement

The 3.3 kV family is available now in bare die and discrete package, with samples and customization options for customers. The 6.5 kV large-die SiC MOSFET is sampling now to U.S.-based customers for evaluation, with standard production parts scheduled for Q4 2026. NoMIS Power is engaging system developers on design-in, target specifications, custom current ratings, and packaging. Teams evaluating high-voltage SiC for HVDC, solid-state transformers, pulsed power, traction, high-power charging, or aerospace and defense platforms can contact NoMIS Power to align to the 6.5 kV, 10 kV, and 20 kV roadmap.

Frequently asked questions

What is NoMIS Power’s 6.5 kV SiC MOSFET? It is a large-die silicon carbide (SiC) power MOSFET that NoMIS Power has demonstrated at over 8 kV blocking voltage, 90 mΩ on-resistance, and 55 A drain current, extending the company’s planar SiC platform from the 3.3 kV class into the 6.5 kV high-voltage class.
When will NoMIS Power’s 6.5 kV SiC devices be available? The 6.5 kV large-die SiC MOSFET is sampling now to U.S.-based customers for evaluation. Standard production 6.5 kV parts are scheduled for Q4 2026.
What is NoMIS Power’s high-voltage SiC roadmap? NoMIS Power’s SiC portfolio spans 1200 V to 20 kV. The 3.3 kV family is in production; the 6.5 kV MOSFET is demonstrated and sampling; and 10 kV MOSFETs, diodes, hybrid (JBSFET) devices, and 20 kV SiC IGBTs are in development for grid-scale HVDC, traction, pulsed power, aerospace, and defense.
How does SiC compare with silicon IGBTs at high voltage? Compared with legacy silicon IGBTs, NoMIS Power’s SiC MOSFETs offer lower switching losses, higher power density, and more robust operation at high temperature, altitude, and radiation, and they require no separate anti-parallel diode – simplifying designs while improving efficiency and survivability.
Is NoMIS Power a domestic (U.S.) source of high-voltage SiC? Yes. NoMIS Power gives U.S. data-center, aerospace, and defense customers a domestic source of high-voltage SiC. Its devices are U.S.-designed, ITAR- and DFARS-aware, available through various foundry options, and already specified in U.S. government-funded programs.
What applications use NoMIS Power’s high-voltage SiC? High-voltage direct current (HVDC) transmission, solid-state transformers, fusion and pulsed power, rail traction, megawatt-scale EV charging, AI data-center power, radar, and aerospace and defense power systems.

About NoMIS Power

NoMIS Power develops advanced silicon carbide (SiC) technologies for medium- and high-voltage power conversion, combining SiC device design, advanced packaging, and power module development. Its portfolio includes SiC MOSFETs, power modules, and high-resistance small-die solutions for compact high-voltage, low-current applications. NoMIS Power supports customers from evaluation through commercialization.

Media and press inquiries: together@nomispower.com
Request 6.5 kV samples or talk to our engineers: contact us

Roadmap dates and devices described as “sampling” or “in development” are forward-looking and subject to change.